Ultra Bright Light Sources for Sensor Testing Applications

Sensor

 

As demand increases for optical sensors and calibration applications, manufacturers need innovative sources to characterize sensor responsivity to specific wavelengths. Energetiq's Laser-Driven Light Sources (LDLS™) and Laser-Driven Tunable Light Sources (LDTLS™) are an ideal fit for such applications as they posses a very bright plasma that guides light into small spots in any wavelength between 170 nm and 2,400 nm. 

Optical sensors such as CMOs and CCD are found in consumer electronic devices such as mobile phones, tablets, and smart watches. 

 

Laser-Driven Light Source (LDLS™) product line. 

Laser-Driven Tunable Light Source (LDTLS™) product line. 

 

Resources

Fibre optic surface plasmon resonance sensor system designed for smartphones

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A fibre optic surface plasmon resonance (SPR) sensor system for smartphones is reported, for the first time. The sensor was fabricated by using an easy-to-implement silver coating technique and by polishing both ends of a 400 µm optical fibre to obtain 45° end-faces. For excitation and interrogation of the SPR sensor system the flash-light and camera at the back side of the smartphone were employed, respectively. Consequently, no external electrical components are required for the operation of the sensor system developed. In a first application example a refractive index sensor was realised. The performance of the SPR sensor system was demonstrated by using different volume concentrations of glycerol solution. A sensitivity of 5.96·10−4 refractive index units (RIU)/pixel was obtained for a refractive index (RI) range from 1.33 to 1.36. In future implementations the reported sensor system could be integrated in a cover of a smartphone or used as a low-cost, portable point-of-care diagnostic platform. Consequently it offers the potential of monitoring a large variety of environmental or point-of-care parameters in combination with smartphones.

 

A CMOS Image Sensor with 240μV/eConversion Gain, 200keFull Well Capacity and 190-1000nm Spectral Response

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In this paper, the structure and the performances of a CMOS image sensor with high conversion gain (CG): 240 μV/e-, high full well capacity (FWC): 200 ke-, wide spectral response: 190-1000 nm and high robustness to ultraviolet (UV) light are described. The developed CMOS image sensor was fabricated by introducing the following key technologies; small capacitance floating diffusion (FD) structure with lateral overflow integration capacitor (LOFIC) for pixel and a thin surface high concentration p+ layer with steep dopant profile for photodiode.